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Dynamic random-access memory ( dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal–oxide–semiconductor (MOS) technology. While most DRAM memory cell designs use a capacitor and transistor ...
In electronics, noise is an unwanted disturbance in an electrical signal. [1] : 5. Noise generated by electronic devices varies greatly as it is produced by several different effects. In particular, noise is inherent in physics and central to thermodynamics. Any conductor with electrical resistance will generate thermal noise inherently.
Active noise control ( ANC ), also known as noise cancellation ( NC ), or active noise reduction ( ANR ), is a method for reducing unwanted sound by the addition of a second sound specifically designed to cancel the first. The concept was first developed in the late 1930s; later developmental work that began in the 1950s eventually resulted in ...
Historical. v. t. e. Static random-access memory ( static RAM or SRAM) is a type of random-access memory (RAM) that uses latching circuitry (flip-flop) to store each bit. SRAM is volatile memory; data is lost when power is removed. The term static differentiates SRAM from DRAM ( dynamic random-access memory): SRAM will hold its data permanently ...
Electromagnetic interference ( EMI ), also called radio-frequency interference ( RFI) when in the radio frequency spectrum, is a disturbance generated by an external source that affects an electrical circuit by electromagnetic induction, electrostatic coupling, or conduction. [1] The disturbance may degrade the performance of the circuit or ...
v. t. e. Resistive random-access memory ( ReRAM or RRAM) is a type of non-volatile (NV) random-access (RAM) computer memory that works by changing the resistance across a dielectric solid-state material, often referred to as a memristor. One major advantage of ReRAM over other NVRAM technologies is the ability to scale below 10 nm.
Radiation hardening is the process of making electronic components and circuits resistant to damage or malfunction caused by high levels of ionizing radiation (particle radiation and high-energy electromagnetic radiation), [1] especially for environments in outer space (especially beyond low Earth orbit), around nuclear reactors and particle accelerators, or during nuclear accidents or nuclear ...
Computer memory and computer data storage types. Phase-change memory (also known as PCM, PCME, PRAM, PCRAM, OUM ( ovonic unified memory) and C-RAM or CRAM ( chalcogenide RAM )) is a type of non-volatile random-access memory. PRAMs exploit the unique behaviour of chalcogenide glass. In PCM, heat produced by the passage of an electric current ...